jiangsu changjiang electronics technology co., ltd sot-363 plastic-encapsulate transistors UMT1N features z two 2sa1037ak chips in a package z mounting possible with sot-36 3 automatic mounting machines. z transistor elements are independ ent, eliminating interference. z mounting cost and area be cut in half. marking: t1 absolute maximum ratings (ta=25 ) symbol parameter l imits units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -6 v i c collector current -continuous -150 ma p c collector dissipation 150 mw t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c =-50 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50 a,i c =0 -6 v collector cut-off current i cbo v cb =-60v,i e =0 -0.1 ua emitter cut-off current i ebo v eb =-6v,i c =0 -0.1 ua dc current gain h fe v ce =-6v,i c =-1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =-50ma,i b =-5ma -0.5 v transition frequency f t v ce =-12v,i e =2ma, f=100mhz 140 mhz output capacitance cob v cb =-12v,i e =0, f=1mhz 5 pf b,nov,2011 j c ( t so t -363 dual transistor (pnp+pnp) www.cj-elec.com 1 e,mar,2016 www.cj-elec.com
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 -0.1 -1 -10 0.1 1 10 100 -1 -10 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 -0.1 -1 -10 -100 -400 -600 -800 -1000 -0.1 -1 -10 -100 -10 -100 -1000 -0.1 -1 -10 -100 10 100 1000 -0 -2 -4 -6 -8 -10 -12 -0 -1 -2 -3 -4 -5 -6 -7 i c ?? v be collector current i c (ma) base-emmiter voltage v be (v) common emitter v ce =-6v t a = 1 0 0 t a = 2 5 -150 c ib c ob f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? output capacitance c ob / c ib (pf) collector-base voltage v cb / v eb (v) -0.5 i c f t ?? transition frequency f t (mhz) collector current i c (ma) -80 v ce = -12v t a =25 p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) -150 =10 t a =25 t a =100 base-emitter saturation voltage v be (sat) (mv) collector current i c (ma) i c v besat ?? -150 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =10 t a =25 t a =100 common emitter t a =25 -150 t a =100 t a =25 i c collector current i c (ma) dc current gain h fe common emitter v ce =-6v h fe ?? -20ua -18ua -16ua -14ua -12ua -10ua -8ua -6ua -20 -4ua i b =-2ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v) typical characteristics www.cj-elec.com 2 www.cj-elec.com e,mar,2016
6 2 7 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 www.cj-elec.com min max min m ax a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0. 0. 150 0.00 0.006 d 2.000 2. 200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.4 0. 085 0.09 e e1 1.200 1. 400 0.047 0.055 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.525 ref 0.021 ref symbol dimensions in millimeters dimensions in inches 0.650 typ 0.026 typ e,mar,2016
so t -3 6 3 tape and reel
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